STMicroelectronics MJD31B
The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs. They are manufactured using Epitaxial Base technology for cost-effective performance.| Part No. | MJD31B |
|---|---|
| Datasheet | MJD31B Download |
| Manufacturer |  STMicroelectronics |
| Description | Complementary Silicon Power Transistors |
| Buy | Stock & Price |
APPLICATIONS
s GENERAL PURPOSE SWITCHING AND AMPLIFIER TRANSISTORSDESCRIPTION
DPAK TO-252 (Suffix ”T4”) INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol Parameter NPN PNP V CBO V CEO V EBO IC I CM IB P t ot T stg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Total Dissipation at Tc = 25 C Storage T emperature Max. O perating Junction Temperature o Value MJD31B MJD32B 80 80 5 3 5 1 15 -65 to 150 150 MJD31C MJD32C 100 100 Uni t V V V A A A W o o C C For PNP types the values are intented negative. May 1999 1/5 MJD31B/31C - MJD32B/32C THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 8.33 100 o o C/W C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symb ol I CES I CEO I EBO V CEO(sus) Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Cu...
