STMicroelectronics MJD32C
The device is manufactured in planar technology with a “base island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.| Part No. | MJD32C |
|---|---|
| Datasheet | MJD32C Download |
| Manufacturer |  STMicroelectronics |
| Description | Low voltage PNP power transistor |
| Buy | Stock & Price |
FEATURES
● Surface-mounting TO-252 power package in tape and reel● Complementary to the NPN type MJD31CT4 Application
● General purpose linear and switching equipment
DESCRIPTION
E(3) SC07710_TAB Product status link MJD32CT4 Product summary Order code MJD32CT4 Marking MJD32C Package DPAK Packing Tape and reel DS14735 - Rev 2 - June 2025 For further information, contact your local STMicroelectronics sales office. 1 Electrical ratings Symbol VCBO VCEO VEBO IC ICM IB PTOT Tstg TJ Table 1. Absolute maximum ratings Parameter Collector-base voltage (IE = 0 A) Collector-emitter voltage (IB = 0 A) Collector-base voltage (IC = 0 A) Collector current Collector peak current Base current Total power dissipation at TC = 25 °C Storage temperature range Operating junction temperature range Table 2. Thermal data Symbol Parameter RthJC Thermal resistance, junction-to-case RthJA(1) Thermal resistance, junction-to-ambient 1. When mounted on a standard 1 inch² area of FR-4 PCB with 2-oz copper. MJD32CT4...
