STMicroelectronics MJD340
The MJD340 and MJD350 form complementary NPN - PNP pairs. They are manufactured using Medium Voltage Epitaxial-Planar technology, resulting in a rugged high performance cost-effective transistor.| Part No. | MJD340 |
|---|---|
| Datasheet | MJD340 Download |
| Manufacturer |  STMicroelectronics |
| Description | COMPLEMENTARY SILICON POWER TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
s SOLENOID/RELAY DRIVERS s GENERAL PURPOSE SWITCHING AND AMPLIFIERDESCRIPTION
3 1 DPAK TO-252 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol Parameter VCBO Collector-Base Voltage (IE = 0) VCEO Collector-Emitter Voltage (IB = 0) VEBO Emitter-Base Voltage (IC = 0) IC Collector Current ICM Collector Peak Current (tp = 25 oC) Ptot Total Power Dissipation at Tcase ≤ 25 oC Tstg Storage Temperature Tj Max Operating Junction Temperature For PNP types voltage and current values are negative. September 2003 NPN PNP Value MJD340 MJD350 300 300 3 0.5 0.75 15 -65 to 150 150 Unit V V V A A W oC oC 1/5 MJD340 / MJD350 THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient Max Max 8.33 100 oC/W oC/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICBO Collector Cut-off Current (vBE = 0) VCB = 300 V IEBO Emitter Cut-off Current VEB = 3 V (IC = 0) VCEO(sus)∗ Collec...
