STMicroelectronics MJD44
The MJD44H11 is a silicon multiepitaxial planar NPN transistors mounted in DPAK plastic package. It is inteded for various switching and general purpose applications. The complementary PNP type is MJD45H11.APPLICATIONS
s GENERAL PURPOSE SWITCHING s GENERAL PURPOSE AMPLIFIERDESCRIPTION
The complementary PNP type is MJD45H11. 3 1 DPAK (TO-252) INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol Parameter NPN PNP V CEO V EBO IC I CM P t ot T stg Tj Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Total Dissipation at T c ≤ 25 C Storage Temperature Max. O perating Junction Temperature o Value MJD44H11 MJD45H11 80 5 8 16 20 -55 to 150 150 Uni t V V A A W o o C C For PNP types the values are intented negative. July 1997 1/5 MJD44H11 / MJD45H11 THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 6.25 o C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s I C = 30 mA V CB = rated V CEO V BE = 0 V EB = 5V IC = 8 A IC = 8 A IC = 2 A IC = 4 A I B = 0.4 A I B = 0.8 A V CE = 1 V V CE = 1 V 60 40 Min. 80 10 50 1 1.5 Typ . Max. Un it V µA µA V V V CEO(sus )∗ Collector-E...