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MJD44H11T4 - Low voltage complementary power transistors

General Description

These devices are manufactured using low voltage multi epitaxial planar technology.

They are intended for general-purpose linear and switching applications.

Key Features

  • TAB 23 1 DPAK C (2, TAB) C (2, TAB).
  • Low collector-emitter saturation voltage.
  • Fast switching speed.

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MJD44H11T4, MJD45H11T4 Datasheet Low voltage complementary power transistors Features TAB 23 1 DPAK C (2, TAB) C (2, TAB) • Low collector-emitter saturation voltage • Fast switching speed Application • General purpose switching and amplifier Description B (1) B (1) These devices are manufactured using low voltage multi epitaxial planar technology. They are intended for general-purpose linear and switching applications.