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MJD45H11T4 - Low voltage complementary power transistors

Download the MJD45H11T4 datasheet PDF. This datasheet also covers the MJD44H11T4 variant, as both devices belong to the same low voltage complementary power transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

These devices are manufactured using low voltage multi epitaxial planar technology.

They are intended for general-purpose linear and switching applications.

Key Features

  • TAB 23 1 DPAK C (2, TAB) C (2, TAB).
  • Low collector-emitter saturation voltage.
  • Fast switching speed.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MJD44H11T4-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MJD45H11T4-A (MJD44H11T4-A / MJD44H11T4-A) Complementary power transistors ST Microelectronics
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MJD45H11 Complementary Power Transistors Kexin
MJD45H11 PNP Epitaxial Silicon Transistor Fairchild
MJD45H11 Complementary power transistors ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
MJD44H11T4 Low voltage complementary power transistors
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MJD117 Complementary power Darlington transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MJD44H11T4, MJD45H11T4 Datasheet Low voltage complementary power transistors Features TAB 23 1 DPAK C (2, TAB) C (2, TAB) • Low collector-emitter saturation voltage • Fast switching speed Application • General purpose switching and amplifier Description B (1) B (1) These devices are manufactured using low voltage multi epitaxial planar technology. They are intended for general-purpose linear and switching applications.