STMicroelectronics MJE5852
MJE5852 is manufactured using High te cVoltage PNP Multi-Epitaxial technology for high le uswitching speed and high voltage capability.| Part No. | MJE5852 |
|---|---|
| Datasheet | MJE5852 Download |
| Manufacturer |  STMicroelectronics |
| Description | HIGH VOLTAGE PNP POWER TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
: t(ss SWITCHING REGULATORS cs MOTOR CONTROL us INVERTERS rod )DESCRIPTION
P t(sThe dIt is intended for use in high frequency and so roefficiency converters, switching regulators and ) - Ob lete Pmotor control. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM bsolete PPrroodduucctt((ss) - ObsoABSOLUTEMAXIMUM RATINGS
O teSymbol oleVCES sVCEO ObVEBO Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Value -450 -400 -7 Unit V V V IC Collector Current -8 A ICM Collector Peak Current (tp < 5ms) -16 A IB Base Current -4 A IBM Base Peak Current (tp < 5ms) -8 A Ptot Total Dissipation at Tc ≤ 25 oC Tstg Storage Temperature Tj Max. Operating Junction Temperature 80 -65 to 150 150 W oC oC September 2003 1/4 MJE5852 THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient Max Max 1.56 62.5 oC/W oC/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min.
