STMicroelectronics MJE803
The MJE802 and MJE803 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in Jedec SOT-32 plastic package.They are intended for use in medium power linear and switching applications.| Part No. | MJE803 |
|---|---|
| Datasheet | MJE803 Download |
| Manufacturer |  STMicroelectronics |
| Description | SILICON NPN POWER DARLINGTON TRANSISTORS |
| Buy | Stock & Price |
DESCRIPTION
3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC IB P tot T stg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Base-Emitter Voltage (IC = 0) Collector Current Base Current Total Power Dissipation at T case ≤ 25 o C Storage Temperature Max Operating Junction Temperature Value 80 80 5 4 0.1 40 -65 to 150 150 Unit V V V A A W o o C C For PNP types voltage and current values are negative. January 1997 1/4 MJE802-MJ803 THERMAL DATA R thj-amb Thermal Resistance Junction-ambient Max 3.13 o C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbol I CBO Parameter Collector Cut-off Current (I E = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CB = rated V CBO V CB = rated V CBO T case = 100 o C V CE = rated V CEO V EB = 5 V I C = 50 mA IC = 4 A I C = 1.5 A IC = 4 A I C = 1.5 A IC = 4 A I C = 1.5 A I C = 1.5 A f = 1 MHz I B = 40 mA I B = 30 mA V CE = 3 V V CE = 3 V V CE = 3 V V CE = 3 V V CE = 3 V 100 750 1 80 3 2.5 3 2.5 Min.
