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MSC81002 - RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

General Description

The MSC81002 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone, emitter ballasted geometry with a refractory/gold metallization system.

This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions.

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Datasheet Details

Part number MSC81002
Manufacturer STMicroelectronics
File Size 128.11 KB
Description RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
Datasheet download datasheet MSC81002 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MSC81002 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . . EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC ® PACKAGE P OUT = 2.0 W MIN. WITH 10 dB GAIN @ 1 GHz .230 2L STUD (S016) hermetically sealed ORDER CODE MSC81002 BRANDING 81002 PIN CONNECTION www.DataSheet4U.com DESCRIPTION The MSC81002 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone, emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. The MSC81002 was designed for Class C amplifier applications in the 0.4 - 1.2 GHz frequency range. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1.