STMicroelectronics MSC81002
The MSC81002 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone, emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. The MSC81002 was designed for Class C amplifier applications in the 0.4 - 1.2 GHz frequency range.| Part No. | MSC81002 |
|---|---|
| Datasheet | MSC81002 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS |
| Buy | Stock & Price |
APPLICATIONS
. . . . EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC ® PACKAGE P OUT = 2.0 W MIN. WITH 10 dB GAIN @ 1 GHz .230 2L STUD (S016) hermetically sealed ORDER CODE MSC81002 BRANDING 81002 PIN CONNECTIONDESCRIPTION
ABSOLUTE MAXIMUM RATINGS
(T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC ≤ 75°C) 6.25 200 35 200 − 65 to +200 W mA V °C °C Collector-Supply Voltage* Junction Temperature Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 20 °C/W *Applies only to rated RF amplifier operation October 1992 1/5 MSC81002ELECTRICAL SPECIFICATIONS
(T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCER I CBO hFE DYNAMIC Symbol IC = 1mA IE = 1mA IC = 5mA VCB = 28V VCE = 5V IE = 0mA IC = 0mA RBE = 10Ω IC = 100mA 45 3.5 45 — 15 — — — — — — — — 0.5 120 V V V mA — Test Conditions Value Min. Typ. Max. Unit POUT ηc GP COB f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1 MHz PIN = 0.2 W PIN = 0.2 W PIN = 0.2 W VCB = 28 V VCC = 28 V VCC = 28 V VCC = 28 V 2.0 50 10 — 2.2 55 10.
