Datasheet Details
| Part number | MSC81035M |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 86.57 KB |
| Description | RF & MICROWAVE TRANSISTORS |
| Datasheet | MSC81035M_STMicroelectronics.pdf |
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Overview: MSC81035M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . . . .. REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 35 W MIN. WITH 10.7 dB GAIN .
| Part number | MSC81035M |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 86.57 KB |
| Description | RF & MICROWAVE TRANSISTORS |
| Datasheet | MSC81035M_STMicroelectronics.pdf |
|
|
|
The MSC81035M is a medium power Class C transistor designed specifically for pulsed L-Band avionics applications.
This device is a direct replacement for the MSC1035M.
MSC81035M offers improved saturated ouput power and collector efficiency based on the test circuit described herein.
| Part Number | Description |
|---|---|
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| MSC81250M | RF & MICROWAVE TRANSISTORS |