STMicroelectronics MSC81058
The MSC81058 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone, emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding infinite load VSWR at any phase angle under rated conditions. The MSC81058 is designed for Class C amplifier applications in the 0.4 - 1.2 GHz frequency range.| Part No. | MSC81058 |
|---|---|
| Datasheet | MSC81058 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF & MICROWAVE TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
. . . . . EMITTER BALLASTED REFRACTORY/GOLD METALLIZATION VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC ® PACKAGE P OUT = 10 W MIN. WITH 10 dB GAIN @ 1 GHz .250 2LFL (S010) hermetically sealed ORDER CODE MSC81058 BRANDING 81058 PIN CONNECTIONDESCRIPTION
ABSOLUTE MAXIMUM RATINGS
(T case = 25 ° C) Symbol Parameter 1. Collector 2. Base 3. Emitter 4. Base Value Unit PDISS IC VCC TJ T STG Power Dissipation* Device Current* Collector-Supply Voltage* Junction Temperature Storage Temperature 29 1.0 35 200 − 65 to +200 W A V °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 6.0 °C/W *Applies only to rated RF amplifier operation October 1992 1/5 MSC81058ELECTRICAL SPECIFICATIONS
(T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCER I CBO hFE DYNAMIC Symbol IC = 1mA IE = 1mA IC = 10mA VCB = 28V VCE = 5V IE = 0mA IC = 0mA RBE = 10Ω IC = 500mA 45 3.5 45 — 15 — — — — — — — — 2.5 120 V V V mA — Test Conditions Value Min. Typ. Max.
