MSC81058
DESCRIPTION
The MSC81058 is a mon base hermetically sealed silicon NPN microwave transistor utilizing a fishbone, emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding infinite load VSWR at any phase angle under rated conditions. The MSC81058 is designed for Class C amplifier applications in the 0.4
- 1.2 GHz frequency range. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter
1. Collector 2. Base
3. Emitter 4. Base
Value
Unit
PDISS IC VCC TJ T STG
Power Dissipation- Device Current- Collector-Supply Voltage- Junction Temperature Storage Temperature
29 1.0 35 200
- 65 to +200
W A V °C °C
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance- 6.0 °C/W
- Applies only to rated RF amplifier operation
October 1992
1/5
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BVEBO BVCER I CBO h FE DYNAMIC
Symbol
IC = 1m A IE = 1m A IC = 10m A VCB = 28V VCE =...
