STMicroelectronics MSC81325M
The MSC81325M device is a high power pulsed transistor specifically designed for DME/TACAN avionics applications. This device is capable of withstanding an infinite load VSWR at any phase angle under full rated conditions. The MSC81325M is housed in the industry-standard AMPAC™ metal/ceramic hermetic package with internal input/output matching structures.| Part No. | MSC81325M |
|---|---|
| Datasheet | MSC81325M Download |
| Manufacturer |  STMicroelectronics |
| Description | RF & MICROWAVE TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
. . . . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER BALLASTED RUGGEDIZED VSWR ∞:1 INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 325 W MIN. WITH 6.7 dB GAIN .400 x .400 2NLFL (S042) hermetically sealed ORDER CODE MSC81325M BRANDING 81325M PIN CONNECTIONDESCRIPTION
Low RF thermal resistance and semiautomatic bonding techniques ensure high reliability and product consistency.ABSOLUTE MAXIMUM RATINGS
(T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ TSTG Power Dissipation* Device Current* (TC ≤ 100˚C) 880 24 55 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.17 °C/W *Applies only to rated RF amplifier operation October 1992 1/3 MSC81325MELECTRICAL SPECIFICATIONS
(T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVC...
