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MSC81350M - RF & MICROWAVE TRANSISTORS

Description

The MSC81350M device is a high power pulsed transistor specifically designed for IFF avionics applications.

This device is capable of withstanding a minimum 20:1 load VSWR at any phase angle under full rated conditions.

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Datasheet Details

Part number MSC81350M
Manufacturer STMicroelectronics
File Size 101.68 KB
Description RF & MICROWAVE TRANSISTORS
Datasheet download datasheet MSC81350M Datasheet
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MSC81350M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . REFRACTORY/GOLD METALLIZATION RUGGEDIZED VSWR 20:1 INTERNAL INPUT/OUTPUT MATCHING LOW THERMAL RESISTANCE METAL/CERAMIC HERMETIC PACKAGE P OUT = 350 W MIN. WITH 7.0 dB GAIN .400 x .400 2NLFL (S042) hermetically sealed ORDER CODE MSC81350M BRANDING 81350M PIN CONNECTION DESCRIPTION The MSC81350M device is a high power pulsed transistor specifically designed for IFF avionics applications. This device is capable of withstanding a minimum 20:1 load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and semi automatic wire bonding techniques ensure high reliability and product consistency. The MSC81350M is housed in the unique AMPAC™ package with internal input/output matching structures.
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