Datasheet Details
| Part number | MSC81350M |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 101.68 KB |
| Description | RF & MICROWAVE TRANSISTORS |
| Datasheet | MSC81350M_STMicroelectronics.pdf |
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Overview: MSC81350M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . REFRACTORY/GOLD METALLIZATION RUGGEDIZED VSWR 20:1 INTERNAL INPUT/OUTPUT MATCHING LOW THERMAL RESISTANCE METAL/CERAMIC HERMETIC PACKAGE P OUT = 350 W MIN. WITH 7.0 dB GAIN .400 x .
| Part number | MSC81350M |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 101.68 KB |
| Description | RF & MICROWAVE TRANSISTORS |
| Datasheet | MSC81350M_STMicroelectronics.pdf |
|
|
|
The MSC81350M device is a high power pulsed transistor specifically designed for IFF avionics applications.
This device is capable of withstanding a minimum 20:1 load VSWR at any phase angle under full rated conditions.
Low RF thermal resistance and semi automatic wire bonding techniques ensure high reliability and product consistency.
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