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MTP3055AFI - N-Channel MOSFET

Download the MTP3055AFI datasheet PDF. This datasheet also covers the MTP3055A variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (MTP3055A-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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/= T SGS THOMSON HD©[^©[i[L[l(gTF^(Q)R!]D©S MTP3055A MTP3055AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE MTP3055A MTP3055AFI Voss 60 V 60 V ^D S (o n ) 0.15 Q 0.15 0 ■ *D 12 A 10 A • ULTRA FAST SWITCHING - UP TO > 100KHz • LOW DRIVE ENERGY FOR EASY DRIVE REDUCES SIZE AND COST • INTEGRAL SOURCE - DRAIN DIODE INDUSTRIAL APPLICATIONS: • GENERAL PURPOSE SWITCH • SERIES REGULATOR N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast times make these POWER MOS transistors ideal for high speed switching circuit in applications such as po­ wer actuator driving, motor drive including bru­ shless motors, robotics, actuators lamp driving, series regulator and many other uses in industrial control applications.