N1HNK60 Datasheet | STMicroelectronics

STD1NK60 - STD1NK60-1 STQ1HNK60R - STN1HNK60 N-CHANNEL 600V - 8Ω - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH™ MOSFET Table 1: General Features TYPE VDSS RDS(on) Pw STD1NK60 STD1NK60-1 STQ1HNK60R STN1HNK60 600 V 600 V 600 V 600 V < 8.5 Ω < 8.5 Ω < 8.5 Ω < 8.5 Ω 1A 1A 0.4 A 0.4 A 30 W 30 W 3W 3.3 W - TYPICAL RDS(on) = 8 Ω - EXTREMELY HIGH dv/dt CAPABILITY - ESD IMPROVED CAPABILITY - 100% AVALANCHE TESTED - NEW HIGH VOLTAGE BENCHMARK - GATE CHARGE MINIMIZED DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very...