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N1N20 - N-CHANNEL MOSFET

General Description

leteThis device is an N-channel Power MOSFET odeveloped using the latest high voltage MESH sOVERLAY™ process.

The new patented STrip blayout coupled with the company’s proprietary Oedge termination structure, makes it suitable in ) -converters for lighting applications.

Figure 1.

Key Features

  • Type VDSS RDS(on) max ID STN1N20 200 V < 1.5 Ω t(s).
  • 100% avalanche tested 1A uc.

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Full PDF Text Transcription for N1N20 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for N1N20. For precise diagrams, and layout, please refer to the original PDF.

STN1N20 N-channel 200 V, 1.2 Ω, 1 A, SOT-223 MESH OVERLAY™ Power MOSFET Features Type VDSS RDS(on) max ID STN1N20 200 V < 1.5 Ω t(s)■ 100% avalanche tested 1A ucApplicati...

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ax ID STN1N20 200 V < 1.5 Ω t(s)■ 100% avalanche tested 1A ucApplication rod■ Switching applications PDescription leteThis device is an N-channel Power MOSFET odeveloped using the latest high voltage MESH sOVERLAY™ process. The new patented STrip blayout coupled with the company’s proprietary Oedge termination structure, makes it suitable in ) -converters for lighting applications. 4 3 2 1 SOT-223 Figure 1. Internal schematic diagram $  roduct(s ' Obsolete P 3 !-V Table 1. Device summary Order code STN1N20 Marking N1N20 Package SOT-223 Packaging Tape and reel June 2011 Doc ID 6772 Rev 3 1/12 www.st.

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