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N790A - low voltage PNP transistor

General Description

The device in manufactured in low voltage PNP planar technology by using a “Base Island” layout.

The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.

Figure 1.

Key Features

  • Very low collector to emitter saturation voltage.
  • DC current gain, hFE >100.
  • 3 A continuous collector current.
  • 40 V breakdown voltage V(BR)CER.
  • SOT-223 plastic package for surface mounting circuits in tape and reel packing.

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STN790A Medium current, high performance, low voltage PNP transistor Features ■ Very low collector to emitter saturation voltage ■ DC current gain, hFE >100 ■ 3 A continuous collector current ■ 40 V breakdown voltage V(BR)CER ■ SOT-223 plastic package for surface mounting circuits in tape and reel packing Applications ■ Power management in portable equipment ■ Voltage regulation in bias supply circuits ■ Switching regulator in battery charger applications ■ Heavy load driver Description The device in manufactured in low voltage PNP planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. 4 1 SOT-223 3 2 Figure 1. Internal schematic diagram Table 1.