STMicroelectronics NAND01G-N
This is preliminary information on a new product now in development or undergoing evaluation.| Part No. | NAND01G-N |
|---|---|
| Datasheet | NAND01G-N Download |
| Manufacturer |  STMicroelectronics |
| Description | 1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and 512 Mbit (x16) LPSDRAM 1.8V Multi-Chip Package |
| Buy | Stock & Price |
FEATURES
summary● Multi-chip Package – NAND Flash Memory – 512 Mbit or 1 Gbit (x8/x16) Large Page Size NAND Flash Memory – 512 Mbit (x16) SDR or DDR LPSDRAM Temperature range – -30 up to 85 °C Supply voltage – NAND Flash : VDDF = 1.7V to 1.95V – LPSDRAM: VDDD = VDDQD = 1.7V to 1.9V Electronic Signature ECOPACK packages FBGA
● TFBGA107 10.5 x 13 x 1.2mm TFBGA149 10 x 13.5 x 1.2mm
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● SDR/DDR LPSDRAM
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● Flash Memory
● Interface: x16 bus width Programmable Partial Array Self Refresh Auto Temperature Compensated Self Refresh Deep Power Down mode 1.8V LVCMOS interface Quad internal Banks controlled by BA0 and BA1 Wrap sequence: Sequential/Interleaved Automatic and Controlled Precharge Auto Refresh and Self Refresh 8,192 Refresh Cycles/64ms Burst Termination by Burst Stop command and Precharge Command Nand Interface – x8 or x16 bus width – Multiplexed address/data Page size – x8 device: (2048 + 64 spare) Bytes – x16 device: (1024 + 32 spare) Words Block size – x8 device: (128K +...
