STMicroelectronics NAND512R3A2C
NAND Flash Memories
| Part No. | NAND512R3A2C |
|---|---|
| Datasheet | NAND512R3A2C Download |
| Manufacturer |  STMicroelectronics |
| Description | NAND Flash Memories |
| Buy | Stock & Price |
FEATURES
● High density NAND Flash memories – – 512 Mbit memory array Cost effective solutions for mass storage applications x8 or x16 bus width Multiplexed Address/ Data FBGA● NAND interface – – TSOP48 12 x 20mm
●
● Supply voltage: 1.8V, 3.0V Page size – – x8 device: (512 + 16 spare) Bytes x16 device: (256 + 8 spare) Words x8 device: (16K + 512 spare) Bytes x16 device: (8K + 256 spare) Words Random access: 12µs (3V)/15µs (1.8V) (max) Sequential access: 30ns (3V)/50ns (1.8V) (min) Page Program time: 200µs (typ)
●
●
●
● Block size – – VFBGA55 8 x 10 x 1mm VFBGA63 9 x 11 x 1mm Hardware Data Protection – Program/Erase locked during Power transitions 100,000 Program/Erase cycles (with ECC) 10 years Data Retention
● Page Read/Program – – –
● Data integrity – –
●
●
●
●
●
● Copy Back Program mode Fast Block Erase: 2ms (Typ) Status Register Electronic Signature Chip Enable ‘don’t care’ Serial Number option Device summary Reference ECOPACK® packages Development tools – – – Error Correction Code models Bad Blocks Management and Wear Leveling algorithms Hardware simulation models Table 1.
