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NAND512W4A2C - (NAND512xxA2C) NAND Flash Memories

Download the NAND512W4A2C datasheet PDF. This datasheet also covers the NAND512R3A2C variant, as both devices belong to the same (nand512xxa2c) nand flash memories family and are provided as variant models within a single manufacturer datasheet.

General Description

6 Memory array organization

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3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 3.

Key Features

  • High density NAND Flash memories.
  • 512 Mbit memory array Cost effective solutions for mass storage.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NAND512R3A2C_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
NAND512W4A2C NAND Flash Memories Numonyx
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NAND512W4A2S NAND SLC small page 70 nm Discrete Numonyx
NAND512W3A2C NAND Flash Memories Numonyx
NAND512W3A2D SLC NAND flash memories Numonyx

Other Datasheets by STMicroelectronics

Part Number Description
NAND512W3A2C (NAND512xxA2C) NAND Flash Memories
NAND512-A 128 Mbit / 256 Mbit / 512 Mbit / 1 Gbit (x8/x16) 528 Byte/264 Word Page / 1.8V/3V / NAND Flash Memories
NAND512-B NAND Flash Memory
NAND512R3A2C (NAND512xxA2C) NAND Flash Memories
NAND512R4A2C (NAND512xxA2C) NAND Flash Memories

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories Features ● High density NAND Flash memories – – 512 Mbit memory array Cost effective solutions for mass storage applications x8 or x16 bus width Multiplexed Address/ Data FBGA ● NAND interface – – TSOP48 12 x 20mm ● ● Supply voltage: 1.8V, 3.0V Page size – – x8 device: (512 + 16 spare) Bytes x16 device: (256 + 8 spare) Words x8 device: (16K + 512 spare) Bytes x16 device: (8K + 256 spare) Words Random access: 12µs (3V)/15µs (1.8V) (max) Sequential access: 30ns (3V)/50ns (1.