Datasheet4U Logo Datasheet4U.com

P105N3LL - N-channel MOSFET

General Description

This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Table 1.

Key Features

  • TAB 3 2 1 TO-220 Order code STP105N3LL VDS 30 V RDS(on) max. ID 3.5 mΩ 150 A.
  • Very low on-resistance.
  • Very low gate charge.
  • High avalanche ruggedness.
  • Low gate drive power loss Figure 1. Internal schematic diagram ' 7$% .
  •  .

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
P105 PASSIVATED ASSEMBLED CIRCUIT ELEMENTS International Rectifier
P105LF4QL Power MOSFET Shindengen
P105LF4QLK Power MOSFET Shindengen
P105LF4QN Power MOSFET Shindengen
P105LF4QNK Power MOSFET Shindengen

Other Datasheets by STMicroelectronics

Part Number Description
P10NB20FP STP10NB20FP
P10NK60ZFP N-CHANNEL Power MOSFET
P10NK70Z N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STP105N3LL N-channel 30 V, 2.7 mΩ typ., 150 A, STripFET™ H6 Power MOSFET in a TO-220 package Datasheet − production data Features TAB 3 2 1 TO-220 Order code STP105N3LL VDS 30 V RDS(on) max. ID 3.5 mΩ 150 A • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Figure 1. Internal schematic diagram ' 7$% *  Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. 6  $0Y Order code STP105N3LL Table 1. Device summary Marking Packages P105N3LL TO-220 Packaging Tube July 2015 This is information on a product in full production.