Download P16NE06 Datasheet PDF
STMicroelectronics
P16NE06
DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size" process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS...