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P16NE06 - STP16NE06

Download the P16NE06 datasheet PDF. This datasheet also covers the P16NE06FP variant, as both devices belong to the same stp16ne06 family and are provided as variant models within a single manufacturer datasheet.

General Description

This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size" process whereby a single body is implanted on a strip layout structure.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (P16NE06FP_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
P16NE06FP STP16NE06FP
P16NF06FP STP16NF06FP
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STP16NE06 ® STP16NE06FP N - CHANNEL 60V - 0.08 Ω - 16A - TO-220/TO-220FP STripFET™ POWER MOSFET TYPE VDSS RDS(on) ID STP16NE06 www.DataSheet4U.ScoTmP16NE06FP 60 V 60 V < 0.100 Ω < 0.100 Ω 16 A 11 A s TYPICAL RDS(on) = 0.08 Ω s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s 175oC OPERATING TEMPERATURE s HIGH dV/dt CAPABILITY s APPLICATION ORIENTED CHARACTERIZATION PRELIMINARY DATA 3 2 1 3 2 1 DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size" process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.