P24NF10 Datasheet | STMicroelectronics

Features Type RDS(on) max. STP24NF10 100 V 60 mΩ 26 A - Exceptional dv/dt capability - 100% avalanche tested - Low gate charge D(2, TAB) Applications - Switching applications G(1) S(3) AM01475v1_no Zen Description This Power MOSFET has been developed using STMicroelectronics' unique STrip FET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for tele and puter applications, and applications with low gate charge driving requirements. Product status link STP24NF10 Product summary Order code STP24NF10 Marking Package TO-220 Packing Tube DS1936 - Rev 8 - February 2022 For further information contact your local STMicroelectronics sales office. .st. Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Drain-source...