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P4NB80FP - STP4NB80FP

Download the P4NB80FP datasheet PDF. This datasheet also covers the P4NB80 variant, as both devices belong to the same stp4nb80fp family and are provided as variant models within a single manufacturer datasheet.

General Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (P4NB80_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
P4NB80 STP4NB80
P4NB50 N-CHANNEL MOSFET
P4N150 N-CHANNEL MOSFET
P4N20 N-channel Power MOSFET
P4NA60FI STP4NA60FI

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
® STP4NB80 STP4NB80FP N - CHANNEL 800V - 3Ω - 4A - TO-220/TO-220FP PowerMESH™ MOSFET TYPE STP4NB80 STP4NB80FP www.DataSheet4U.com s s s s s V DSS 800 V 800 V R DS(on) 3.3 Ω 3.3 Ω ID 4A 4A TYPICAL RDS(on) = 3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 1 2 3 1 2 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.