P55NE06 Datasheet | STMicroelectronics

.DataSheet.in STP55NE06 STP55NE06FP - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE™ ” POWER MOSFET TYPE ST P55NE06 ST P55NE06FP s s s s s s V DSS 60 V 60 V R DS(on) < 0.022 Ω < 0.022 Ω ID 55 A 30 A TYPICAL RDS(on) = 0.019 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC HIGH dv/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION TO-220 1 2 DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable...