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STP55NE06 STP55NE06FP
N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE™ ” POWER MOSFET
TYPE ST P55NE06 ST P55NE06FP
s s s s s s
V DSS 60 V 60 V
R DS(on) < 0.022 Ω < 0.022 Ω
ID 55 A 30 A
TYPICAL RDS(on) = 0.019 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC HIGH dv/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION TO-220
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DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
P55NE06 Datasheet
