Datasheet Details
| Part number | P5NA80 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 303.35 KB |
| Description | STP5NA80 |
| Datasheet | P5NA80-STMicroelectronics.pdf |
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Overview: ( DataSheet : .. ) STP5NA80 STP5NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP5NA80 STP5NA80FI VDSS 800 V 800 V RDS(on) < 2.4 Ω < 2.4 Ω ID 4.7 A 2.8 A s TYPICAL RDS(on) = 1.
| Part number | P5NA80 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 303.35 KB |
| Description | STP5NA80 |
| Datasheet | P5NA80-STMicroelectronics.pdf |
|
|
|
This series of POWER MOSFETS represents the most advanced high voltage technology.
The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGS = 20 kΩ) VGS Gate-source Voltage ID Drain Current (continuous) at Tc = 25 oC ID Drain Current (continuous) at Tc = 100 oC IDM(•) Drain Current (pulsed) Ptot Total Dissipation at Tc = 25 oC Derating Factor VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature Tj Max.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
P5NA80FI | STSTP5NA80FI | ST Microelectronics |
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