Datasheet Details
| Part number | P5NC70Z |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 277.84 KB |
| Description | STP5NC70Z |
| Datasheet | P5NC70Z P5NC70 Datasheet (PDF) |
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Overview: STP5NC70Z - STP5NC70ZFP STB5NC70Z - STB5NC70Z-1 N-CHANNEL 700V - 1.8Ω - 4.6A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™III MOSFET TYPE STP5NC70Z/FP .. STB5NC70Z/-1 s s VDSS 700V 700V RDS(on) <2Ω <2Ω ID 4.6 A 4.6 A 1 3 s s s TYPICAL RDS(on) = 1.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | P5NC70Z |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 277.84 KB |
| Description | STP5NC70Z |
| Datasheet | P5NC70Z P5NC70 Datasheet (PDF) |
|
|
|
The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source.
Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.
APPLICATIONS SINGLE-ENDED SMPS IN MONITORS, PUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT s I²PAK (Tabless TO-220) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (1) PTOT IGS VESD(G-S) dv/dt VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-source Current Gate source ESD(HBM-C=100pF, R=15KΩ) Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max.
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| P5NB100FP | STP5NB100FP |
| P5NK100Z | STP5NK100Z |
| P5NK50ZFP | STP5NK50ZFP |
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| P5NK60ZFP | N-Channel MOSFET |
| P5NK65ZFP | STP5NK65ZFP |
| P5NK80Z | STP5NK80Z |