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P5NK60Z - N-Channel MOSFET

General Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Key Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/12 Free Data.

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Other Datasheets by STMicroelectronics

Part Number Description
P5NK60ZFP N-Channel MOSFET
P5NK65ZFP STP5NK65ZFP
P5NK100Z STP5NK100Z
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P5NK80Z STP5NK80Z

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-CHANNEL 600V - 1.2Ω - 5A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH™Power MOSFET TYPE STP5NK60Z STP5NK60ZFP STD5NK60Z s s s s s s STP5NK60Z - STP5NK60ZFP STD5NK60Z VDSS 600 V 600 V 600 V RDS(on) < 1.6 Ω < 1.6 Ω < 1.6 Ω ID 5A 5A 5A Pw 90 W 25 W 90 W 3 1 2 TYPICAL RDS(on) = 1.2 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-220 TO-220FP 3 1 DPAK DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.