P62NS04Z Datasheet (PDF) Download
STMicroelectronics
P62NS04Z

Description

This fully clamped MOSFET is produced by using the latest advanced Company’s Mesh Overlay process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment.

Key Features

  • VDSS (@Tjmax) Clamped RDS(on) <0.015Ω ID 62A 100% avalanche tested Low capacitance and gate charge 175° C maximum junction temperature TO-220 1 2