P75NS04Z - STP75NS04Z

Datasheet Summary

Description

This fully clamped MOSFET is produced by using the latest advanced Company’s Mesh Overlay process which is based on a novel strip layout.

Features

Type STP75NS04Z VDSS Clamped RDS(on) < 11mΩ ID 80A.
Low capacitance and gate charge.
100% avalanche tested.
175°C maximum junction temperature.

STMicroelectronics

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Datasheet Details

Part number	P75NS04Z
Manufacturer	STMicroelectronics
File Size	209.39 KB
Description	STP75NS04Z
Datasheet	P75NS04Z Datasheet
Additional preview pages of the P75NS04Z datasheet.

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Full PDF Text Transcription

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STP75NS04Z N-channel Clamped - 7mΩ - 80A - TO-220 Fully protected MESH Overlay™ III Power MOSFET General features Type STP75NS04Z VDSS Clamped RDS(on) < 11mΩ ID 80A ■ Low capacitance and gate charge ■ 100% avalanche tested ■ 175°C maximum junction temperature Description This fully clamped MOSFET is produced by using the latest advanced Company’s Mesh Overlay process which is based on a novel strip layout. The inherent benefits of a new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encoured in power tools. Any other application requiring extra ruggedness is also recommended.

Published: Aug 14, 2016 |