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P7NK30Z - STP7NK30Z

General Description

ucThe SuperMESH™ series is obtained through an dextreme optimization of ST’s well established rostrip-based PowerMESH™ layout.

capability for the most demanding applications.

Key Features

  • Type VDSS RDS(on) max ID Pw STF7NK30Z t(s)STP7NK30Z STD7NK30Z 300 V 300 V 300 V < 0.9 Ω < 0.9 Ω < 0.9 Ω 5 A 20 W 5 A 50 W 5 A 50 W uc.
  • 100% avalanche tested rod.
  • Extremely high dv/dt capability P.
  • Gate charge minimized te.
  • Very low intrinsic capacitances le.
  • Very good manufacturing repeatability bso.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD7NK30Z, STF7NK30Z STP7NK30Z N-channel, 300 V, 0.80 Ω, 5 A TO-220, TO-220FP, DPAK Zener-protected SuperMESH™ Power MOSFET Features Type VDSS RDS(on) max ID Pw STF7NK30Z t(s)STP7NK30Z STD7NK30Z 300 V 300 V 300 V < 0.9 Ω < 0.9 Ω < 0.9 Ω 5 A 20 W 5 A 50 W 5 A 50 W uc■ 100% avalanche tested rod■ Extremely high dv/dt capability P■ Gate charge minimized te■ Very low intrinsic capacitances le■ Very good manufacturing repeatability bsoApplications - O■ Switching application t(s)Description ucThe SuperMESH™ series is obtained through an dextreme optimization of ST’s well established rostrip-based PowerMESH™ layout. In addition to Ppushing on-resistance significantly down, special tecare is taken to ensure a very good dv/dt capability for the most demanding applications.