P9NB50FP Datasheet | STMicroelectronics

.. N-CHANNEL 500V - 0.75 Ω - 8.6 A TO-220/TO-220FP PowerMesh™ MOSFET TYPE STP9NB50 STP9NB50FP s s s s s STP9NB50 STP9NB50FP VDSS 500 V 500 V RDS(on) < 0.85 Ω < 0.85 Ω ID 8.6 A 4.9 A TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 1 2 1 2 TO-220 TO-220FP DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the pany’s proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and...