STMicroelectronics PD20015C
The PD20015C is a common source N-channel, enhancement-mode lateral FieldEffect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 2 GHz.| Part No. | PD20015C |
|---|---|
| Datasheet | PD20015C Download |
| Manufacturer |  STMicroelectronics |
| Description | Transistors |
| Buy | Stock & Price |
FEATURES
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● Excellent thermal stability Common source configuration POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V BeO free package ESD protection In compliance with the 2002/95/EC european directive M243 Epoxy sealed
DESCRIPTION
PD20015C boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology. PD20015C’s superior linearity performance makes it an ideal solution for mobile application. 2 1. Drain 2. Gate 3. Source Figure 1. Pin connection 1 3 Table 1. Device summary Order code PD20015C Package M243 Packing Box November 2007 Rev 1 1/9 9 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Contents PD20015C Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 1.2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
