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PD57018-E Datasheet Rf Power Transistor

Manufacturer: STMicroelectronics

Overview: PD57018-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral.

General Description

The device is a mon source N-channel, enhancement-mode lateral field-effect RF power transistor.

It is designed for high gain, broad band mercial and industrial applications.

It operates at 28 V in mon source mode at frequencies of up to 1 GHz.

Key Features

  • Excellent thermal stability.
  • Common source configuration.
  • POUT = 18 W with 16.5dB gain@945 MHz/28 V.
  • New RF plastic package.

PD57018-E Distributor