PD57018-E Description
The device is a mon source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band mercial and industrial applications. It operates at 28 V in mon source mode at frequencies of up to 1 GHz.
PD57018-E Key Features
- Excellent thermal stability
- mon source configuration
- POUT = 18 W with 16.5dB gain@945 MHz/28 V
- New RF plastic package