PD57018-E
PD57018-E is RF POWER transistor manufactured by STMicroelectronics.
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
Features
- Excellent thermal stability
- mon source configuration
- POUT = 18 W with 16.5dB gain@945 MHz/28 V
- New RF plastic package
Description
The device is a mon source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band mercial and industrial applications. It operates at 28 V in mon source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity...
