PD57018-E Overview
Key Specifications
Mount Type: Surface Mount
Pins: 3
Operating Voltage: 28 V
Max Frequency: 1 GHz
Description
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications.
Key Features
- Excellent thermal stability
- Common source configuration
- POUT = 18 W with 16.5dB gain@945 MHz/28 V
- New RF plastic package
