PD57030-E Overview
Key Specifications
Mount Type: Surface Mount
Pins: 3
Operating Voltage: 28 V
Max Frequency: 1 GHz
Description
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications.
Key Features
- Excellent thermal stability
- Common source configuration
- POUT = 30 W with 14dB gain @ 945 MHz / 28 V
- New RF plastic package
