STMicroelectronics PD57030S-E
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications.| Part No. | PD57030S-E |
|---|---|
| Datasheet | PD57030S-E Download |
| Manufacturer |  STMicroelectronics |
| Description | RF Power Transistor |
| Buy | Stock & Price |
FEATURES
● Excellent thermal stability● Common source configuration
● POUT = 30 W with 14dB gain @ 945 MHz / 28 V
● New RF plastic package
DESCRIPTION
It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly. Mounting recommendations are available in (look for application note AN1294) PowerSO-10RF (formed lead) PowerSO-10RF (straight lead) Figure 1. Pin connection Source Gate Drain Table 1. Device summary Order code PD57030-E PD57030S-E PD57030TR-E PD57030STR-E Package PowerSO-10RF (formed l...
