PD57045-E Datasheet | STMicroelectronics

Features - Excellent thermal stability - mon source configuration - POUT = 45 W with 13d B gain @ 945 MHz / 28 V - New RF plastic package Description The device is a mon source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band mercial and industrial applications. It operates at 28 V in mon source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, Power SO-10RF. Device’s superior linearity performance makes it an ideal solution for base station applications. The Power SO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances...