STMicroelectronics PD57060S-E
The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications.| Part No. | PD57060S-E |
|---|---|
| Datasheet | PD57060S-E Download |
| Manufacturer |  STMicroelectronics |
| Description | RF POWER transistor |
| Buy | Stock & Price |
FEATURES
● Excellent thermal stability● Common source configuration
● POUT = 60 W with 14.3dB gain@ 945 MHz/28 V
● New RF plastic package
DESCRIPTION
It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optmized for RF needs and offers excellent RF performances and ease of assembly.
