Datasheet Details
| Part number | PD57060S-E |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 478.75 KB |
| Description | RF POWER transistor |
| Download | PD57060S-E Download (PDF) |
|
|
| Part number | PD57060S-E |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 478.75 KB |
| Description | RF POWER transistor |
| Download | PD57060S-E Download (PDF) |
|
|
|
The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET.
It is designed for high gain, broad band commercial and industrial applications.
It operates at 28 V in common source mode at frequencies up to 1 GHz.
PD57060S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral.
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