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RF5L052K0CB4 Datasheet PDF

STMicroelectronics RF5L052K0CB4

The RF5L052K0CB4 is a 2000 W, 50 V, high performance, unmatched LDMOS FET, designed for wideband commercial and industrial applications in the frequency range from HF to 500 MHz. It can be used for both CW and pulse application. It is featured for high power and high ruggedness, suitable for industrial, scientific and medical application, as well as FM radio, VHF TV and aerospace applications.
Part No. RF5L052K0CB4
Datasheet RF5L052K0CB4 Download
Manufacturer
STMicroelectronics
Description 2000W 50V RF power LDMOS transistor
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RF5L052K0CB4 datasheet page 1 preview

FEATURES

Order code Frequency VDD POUT Gain Efficiency RF5L052K0CB4 108 MHz 50 V 2000 W 19.5 dB 77%
● High efficiency and linear gain operations
● Integrated ESD protection
● Large positive and negative gate-source voltage range for improved class C operation
● High breakdown voltage enable class E operation
● On chip RC network enable high stability and ruggedness
● Excellent thermal stability, low HCI drift
● In compliance with the european directive 2002/95/EC

APPLICATIONS

● 30-88 MHz/136-174 MHz ground communication
● 1.6-30 MHz HF transceiver
● Plasma generator
● Particle accelerator
● FM and VHF TV broadcast

DESCRIPTION

It can be used for both CW and pulse application. DS13743 - Rev 2 - October 2021 For further information contact your local STMicroelectronics sales office. RF5L052K0CB4 Electrical ratings 1 Electrical ratings Symbol VDS VGS VDD TSTG TJ Table 1. Absolute maximum ratings (TC = 25 °C) Parameter Drain-source voltage Gate-source voltage Maximum operating voltage Storage temperature range Maximum junction temperature Table 2.
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