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RF5L052K0CB4 Datasheet RF power LDMOS transistor

Manufacturer: STMicroelectronics

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General Description

The RF5L052K0CB4 is a 2000 W, 50 V, high performance, unmatched LDMOS FET, designed for wideband commercial and industrial applications in the frequency range from HF to 500 MHz.

It can be used for both CW and pulse application.

It is featured for high power and high ruggedness, suitable for industrial, scientific and medical application, as well as FM radio, VHF TV and aerospace applications.

Overview

RF5L052K0CB4 Datasheet 2000 W, 50 V, HF to 500 MHz RF power LDMOS transistor 1 2 5 4 3 D4E Pin connection Pin Connection 1 Drain A 2 Drain B 3 Source (bottom side) 4 Gate B 5 Gate A Product status link RF5L052K0CB4.

Key Features

  • Order code Frequency VDD POUT Gain Efficiency RF5L052K0CB4 108 MHz 50 V 2000 W 19.5 dB 77%.
  • High efficiency and linear gain operations.
  • Integrated ESD protection.
  • Large positive and negative gate-source voltage range for improved class C operation.
  • High breakdown voltage enable class E operation.
  • On chip RC network enable high stability and ruggedness.
  • Excellent thermal stability, low HCI drift.
  • In compliance with the euro.

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