STMicroelectronics RHFAHC00
The RHFAHC00 device is a very high-speed pure CMOS quad 2-input NAND gate, designed for radiation hardness and characterized in total ionization dose (TID) and single event effect (SEE). It is available in die-form and in hermetic ceramic Flat 14-lead screened as per MILPRF-38535 to comply with the needs of space applications. It can work from -55 °C to +125 °C ambient temperature.| Part No. | RHFAHC00 |
|---|---|
| Datasheet | RHFAHC00 Download |
| Manufacturer |  STMicroelectronics |
| Description | Rad-hard quad high-speed NAND gate |
| Buy | Stock & Price |
FEATURES
● 1.8 V to 3.3 V nominal supply● 3.6 V max. operating
● 4.8 V AMR
● Very high-speed: propagation delay of 3 ns maximum guaranteed
● Pure CMOS process
● CMOS output
● Ultra-low power
● 300 krad TID targeted
● No SEL at 125 MeV.cm2/mg
● No SEL at 62.5 MeV.cm2/mg
● SMD : 5962F18202
● Mass : 0.55 g
APPLICATIONS
● Oscillators in space applications● FPGA
● Microcontrollers
DESCRIPTION
DS12465 - Rev 3 - April 2026 For further information, contact your local STMicroelectronics sales office. 1 Pin description 1.1 Pin description Figure 1. Pin description 1A 1 1B 2 1Y 3 2A 4 2B 5 2Y 6 GND 7 14 Vcc 13 4B 12 4A 11 4Y 10 3B 9 3A 8 3Y Note: Pin 7 (GND) is electrically connected to the metallic lid. Figure 2. Schematic RHFAHC00 Pin description Note: Table 1. Truth table Inputs mA mB L L H L L H H H Outputs mY H H H L H = high voltage level; L= low voltage level. This truth table is functionally tested with a square signal of 150 MHz between 0 V (low input level) and Vcc (high input level), from 1.65 V to 3.6 V power supply, from -55 °C to 125 °C ambient temperature.
