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RVNB35NV04 - fully autoprotected Power MOSFET

Description

The RVNB35NV04 is a monolithic device designed in STMicroelectronics® VIPower® M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications.

Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.

Features

  • Type RVNB35NV04 RDS(on) 10 m Ilim 30 A Vclamp 40 V.
  • Linear current limitation.
  • Thermal shutdown.
  • Short circuit protection.
  • Integrated clamp.
  • Low current drawn from input pin.
  • Diagnostic feedback through input pin.
  • ESD protection.
  • Direct access to the gate of the Power MOSFET (analog driving).
  • Compatible with standard Power MOSFET.
  • Aerospace and Defense features.
  • Dedicated traceability and part marking.
  • Production parts ap.

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RVNB35NV04 OMNIFET II fully autoprotected Power MOSFET Datasheet - production data *$3*36   D2PAK Features Type RVNB35NV04 RDS(on) 10 m Ilim 30 A Vclamp 40 V  Linear current limitation  Thermal shutdown  Short circuit protection  Integrated clamp  Low current drawn from input pin  Diagnostic feedback through input pin  ESD protection  Direct access to the gate of the Power MOSFET (analog driving)  Compatible with standard Power MOSFET  Aerospace and Defense features – Dedicated traceability and part marking – Production parts approval documents available – Adapted Extended life time and obsolescence management – Extended Product Change Notification process – Designed and manufactured to meet sub ppm quality goals – Advanced mold and frame designs for Superior
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