STMicroelectronics SCT014TO65G3
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.| Part No. | SCT014TO65G3 |
|---|---|
| Datasheet | SCT014TO65G3 Download |
| Manufacturer |  STMicroelectronics |
| Description | 650V 110A Silicon carbide Power MOSFET |
| Buy | Stock & Price |
FEATURES
TO-LL Order code VDS RDS(on) typ. SCT014TO65G3 650 V 13.5 mΩ● Very fast and robust intrinsic body diode
● Very low RDS(on) over the entire temperature range
● High speed switching performances
● Source sensing pin for increased efficiency ID 110 A Drain (TAB)
APPLICATIONS
● Switching mode power supply● DC-DC converters
DESCRIPTION
Power source (3, 4, 5, 6, 7, 8) N-chG1DS2PS34567DTAB Product status link SCT014TO65G3 Product summary Order code SCT014TO65G3 Marking 014TO65G3 Package TO-LL Packing Tape and reel DS14848 - Rev 1 - November 2024 For further information contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage Gate-source voltage VGS Gate-source voltage (recommended operating values) Gate-source transient voltage, tp < 1 μs, t ≤ 10 hours over lifetime Drain current (continuous) at TC = 25 °C ID(1) Drain current (continuous) at TC = 100 °C IDM(2) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C Tstg Storage temperature range TJ Operating junction temperature range 1.
