STMicroelectronics SCT040H65G3-7
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.| Part No. | SCT040H65G3-7 |
|---|---|
| Datasheet | SCT040H65G3-7 Download |
| Manufacturer |  STMicroelectronics |
| Description | 650V 30A Silicon carbide Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) typ. ID SCT040H65G3-7 650 V 40 mΩ 30 A● Very fast and robust intrinsic body diode
● Very low RDS(on) over the entire temperature range
● High speed switching performances
● Source sensing pin for increased efficiency
APPLICATIONS
● Switching mode power supply● Power supply for renewable energy systems
● DC-DC converters
DESCRIPTION
Product status link SCT040H65G3-7 Product summary Order code SCT040H65G3-7 Marking 40H65G3 Package H²PAK-7 Packing Tape and reel DS14383 - Rev 2 - February 2024 For further information contact your local STMicroelectronics sales office. T 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage Gate-source voltage VGS Gate-source voltage (recommended operating values) Gate-source transient voltage, tp < 1 μs, t ≤ 10 hours over lifetime Drain current (continuous) at TC = 25 °C ID(1) Drain current (continuous) at TC = 100 °C IDM(2) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C Tstg Storage temperature range TJ Operating junction temperature range 1.
