STMicroelectronics SCT040H65G3AG
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.| Part No. | SCT040H65G3AG |
|---|---|
| Datasheet | SCT040H65G3AG Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive-grade silicon carbide Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code SCT040H65G3AG VDS 650 V RDS(on) typ. 40 mΩ ID 30 A● AEC-Q101 qualified
● Very low RDS(on) over the entire temperature range
● High speed switching performances
● Very fast and robust intrinsic body diode
● Source sensing pin for increased efficiency
APPLICATIONS
● DC/DC converter for EV/HEV● Main inverter (electric traction)
● On board charger (OBC)
DESCRIPTION
Product status link SCT040H65G3AG Product summary Order code SCT040H65G3AG Marking 40H65G3AG Package H²PAK-7 Packing Tape and reel DS13883 - Rev 4 - March 2025 For further information, contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage Gate-source voltage VGS Gate-source voltage (recommended operating values) Gate-source transient voltage, tp < 1 μs, t ≤ 10 hours over lifetime Drain current (continuous) at TC = 25 °C ID(1) Drain current (continuous) at TC = 100 °C IDM(2) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C Tstg Storage temperature range TJ Operating junction temperature range 1.
