SCT040TO65G3
Features
TO-LL
Order code
RDS(on) typ.
650 V
40 mΩ
35 A
- Very fast and robust intrinsic body diode
- Very low RDS(on) over the entire temperature range
- High speed switching performances
- Source sensing pin for increased efficiency
Drain (TAB)
Applications
- Switching mode power supply
- DC-DC converters
Description
Power source (3, 4, 5, 6, 7, 8)
N-ch G1DS2PS34567DTAB
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation Si C MOSFET technology. The device features a very low RDS(on) over the entire temperature range bined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Product status link SCT040TO65G3
Product summary
Order code
Marking
040TO65G3
Package
TO-LL
Packing
Tape and reel
DS14654
- Rev 1
- April 2024 For further information contact your local...
