STMicroelectronics SCT045W17KAG
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.| Part No. | SCT045W17KAG |
|---|---|
| Datasheet | SCT045W17KAG Download |
| Manufacturer |  STMicroelectronics |
| Description | 1700V 48A Automotive-grade Silicon carbide Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code SCT045W17KAG VDS 1700 V RDS(on) typ. 55 mΩ ID 48 A HiP247 3 2 1 D(2, TAB)● AEC-Q101 qualified
● Very low RDS(on) over the entire temperature range
● High speed switching performances
● Very fast and robust intrinsic body diode
● Very high operating junction temperature capability (TJ = 200 °C)
APPLICATIONS
● DC/DC converter for EV/HEV● Main inverter (electric traction) G(1)
● On board charger (OBC)
DESCRIPTION
S(3) AM01475v1_noZen Product status link SCT045W17KAG Product summary Order code SCT045W17KAG Marking 45W170KAG Package HiP247 Packing Tube DS14944 - Rev 1 - April 2025 For further information, contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage Gate-source voltage VGS Gate-source voltage (recommended operating values) Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C Tstg Storage temperature range TJ Operating junction temperature range 1.
