SCT055HU65G3AG Datasheet | STMicroelectronics

Features Order code SCT055HU65G3AG VDS 650 V RDS(on) typ. 58 mΩ ID 30 A - AEC-Q101 qualified - Very low RDS(on) over the entire temperature range - High speed switching performances - Very fast and robust intrinsic body diode - Source sensing pin for increased efficiency Applications - Main inverter (electric traction) - DC/DC converter for EV/HEV - On board charger (OBC) Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation Si C MOSFET technology. The device features a very low RDS(on) over the entire temperature range bined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction. Product status link SCT055HU65G3AG Product summary Order code Marking SCT55HU65G3AG Package HU3PAK Packing Tape and reel DS13950 - Rev 1 - March 2022 For further information contact your local STMicroelectronics sales office. .st. Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Drain-source voltage Gate-source voltage Gate-source voltage (remended operating...