SCT055TO65G3
Description
Power source (3, 4, 5, 6, 7, 8) N-chG1DS2PS34567DTAB This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range bined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Key Features
- Very fast and robust intrinsic body diode
- Very low RDS(on) over the entire temperature range
- High speed switching performances
- Source sensing pin for increased efficiency Drain (TAB)
