STMicroelectronics SCTHCT250N12G3AG
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.| Part No. | SCTHCT250N12G3AG |
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| Datasheet | SCTHCT250N12G3AG Download |
| Manufacturer |  STMicroelectronics |
| Description | 1200V 239A Automotive-grade silicon Silicon carbide Power MOSFET |
| Buy | Stock & Price |
FEATURES
1 4 32 STPAK high creepage Drain(4) Gate(3) Driver source(2) Power source(1) 23● 1
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● Order code SCTHCT250N12G3AG VDS 1200 V RDS(on) typ. 8.5 mΩ AEC-Q101 qualified Very low RDS(on) over the entire temperature range High speed switching performances Very fast and robust intrinsic body diode Very high operating junction temperature capability (TJ = 200 °C) Source sensing pin for increased efficiency Low thermal resistance multi sintering package 7.3 mm minimum creepage (including 0.6 mm particles) 1020 Vrms PD2 Application
● Main inverter (electric traction) ID 239 A NG3DS2PS1D4
DESCRIPTION
Product status link SCTHCT250N12G3AG Product summary Order code SCTHCT250N12G3AG Marking HCT25N12G3AG Package STPAK high creepage Packing Tray DS14831 - Rev 1 - November 2024 For further information contact your local STMicroelectronics sales office. SCTHCT250N12G3AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Gate-source voltage VG...
