SCTHS250N120G3AG
Features
Order code
VDS 1200 V
RDS(on) typ. 8.5 mΩ
ID 239 A
- AEC-Q101 qualified
- Very low RDS(on) over the entire temperature range
- High speed switching performances
- Very fast and robust intrinsic body diode
- Very high operating junction temperature capability (TJ = 200 °C)
- Source sensing pin for increased efficiency
Application
- Main inverter (electric traction)
Description
NG3DS2PS1D4
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation Si C MOSFET technology. The device features a very low RDS(on) over the entire temperature range bined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Product status link SCTHS250N120G3AG
Product summary
Order code SCTHS250N120G3AG
Marking
SC250N12G3AG
Package
STPAK
Packing
Tray
DS14480
- Rev 2
- June 2024 For further...
